These simulation methods were applied to irradiated crystalline Si and Ag in order to clarify the minimum amount of disorder which could be experimentally observed. In the case of Si, it was found that isolated cascades which formed at energies that were near to the displacement threshold were clearly visible. In the case of Ag, observable disordered regions were generated only by the overlapping of many cascades which were produced by energies that were well above the energy displacement threshold.

G.Mattei, A.M.Mazzone: Physica Status Solidi B, 1994, 186[2], 367-74