Improvements in the optical absorption bandwidth of high dislocation-density layers, the enhancement of solar-cell efficiency by the use of ion-implanted defect layers, and the electro-optical properties of porous Si were correlated with results on grain boundaries with defined parameters. These grain boundaries were also those which enhanced optical sensitivity and critical current densities in high-temperature superconductors due to a flux-pinning effect.

H.F.Mataré: Applied Physics Letters, 1994, 65[26], 3353-5