The self-diffusion of In and Sb was studied (tables 1 and 2) in polycrystalline films by using neutron activation tracer scanning methods. The grain boundary diffusion parameters were evaluated at temperatures ranging from 200 to 400C. The pre-exponential factor and the activation energy for In self-diffusion were 1.17 x 10-10m2/s and 0.84eV, respectively. The parameters for Sb self-diffusion were 1.32 x 10-8m2/s and 1.11eV, respectively. Both In and Sb diffused via grain boundaries within the temperature range which was studied. The grain boundary energy and its temperature dependence was also deduced (tables 3 and 4).

A.Rastogi, K.V.Reddy: Semiconductor Science and Technology, 1994, 9[11], 2067-72

Table 1

Diffusivity of In in InSb

Table 2

Diffusivity of Sb in InSb

Table 3

Grain Boundary Energies in InSb Films

Table 4

Grain Boundary Energies in InSb Films