Transient enhanced intermixing, produced by a focussed laser beam, was observed in As-rich non-stoichiometric quantum wells which were grown using a substrate temperature of about 300C. The intermixing was attributed to a supersaturated concentration of group-III vacancies which were incorporated into the crystal due to the low-temperature growth conditions. The intermixing was enhanced, by several orders of magnitude, when compared to diffusion in stoichiometric structures which were grown using normal substrate temperatures.

Enhanced Diffusion in Laser-Annealed Non-Stoichiometric AlAs/GaAs Heterostructures. S.Balasubramanian, D.D.Nolte, M.R.Melloch: Journal of Applied Physics, 2000, 88[8], 4576-81