A study was made of the quality of AlGaInP epitaxial layers which were re-grown onto AlGaInP quaternary alloy groove structures, via low-pressure metal-organic vapour-phase epitaxy. Re-grown layers were investigated by means of cross-sectional transmission electron microscopy. It was found that the dislocation density in the re-grown epitaxial layer depended upon the growth temperature during re-growth. At low growth temperatures, high densities of dislocations (due to lattice mismatch) were observed in the re-grown layers. At higher temperatures, re-grown AlGaInP layers, with markedly reduced dislocation densities were obtained.

Epitaxial Re-Growth of AlGaInP on AlGaInP Grooved by MOVPE. T.Fukuhisa, O.Imafuji, M.Mannoh, M.Yuri, K.Itoh: Journal of Crystal Growth, 2000, 221, 208-11