Single-crystal growth at temperatures as low as 100C was successfully achieved, as indicated by the appearance of superlattice peaks in the X-ray diffraction spectra, as well as by the 300K photoluminescence emission. The temporal development of transmission changes following optical excitation (pump-probing) of the low-temperature material was predominantly governed by 2 recombination paths. Modelling of this bi-exponential decay on the basis of a 3-level approach revealed the characteristics of the main trap which was incorporated into the quantum-well material when grown at low temperatures. This trap was attributed to AsGa, as supported by the results of Be doping.

Low-Temperature MBE Growth and Characteristics of InP-Based AlInAs/GaInAs MQW Structures. H.Kuenzel, K.Biermann, D.Nickel, T.Elsaesser: Journal of Crystal Growth, 2001, 227-228, 284-8