Deep levels in layers which had been grown by using metal-organic chemical vapour deposition, and various V/III mole ratios, were studied by using deep-level transient spectroscopy. A deep level which originated from P vacancies was observed, with an activation energy of 0.65eV. Examination of this P vacancy-related deep level provided a relatively simple means for understanding the P vacancy in AlInP, thus allowing the determination of a suitable V/III mole ratio for growing AlInP.

Phosphorus Vacancy as a Deep Level in AlInP Layers. W.J.Sung, Y.R.Wu, S.C.Lee, T.C.Wen, T.J.Li, J.T.Chang, W.I.Lee: Japanese Journal of Applied Physics - 2, 2000, 39[6B], L567-8