A large persistent photoconductivity was found in Si-doped samples, at temperatures below 60K, after exposure to light having photon energies of above 1.5eV. At the same time, a persistent electron spin resonance signal was observed, with an isotropic g-factor of 1.9885 which was due to an effective mass donor state. No spin resonance signal was detectable after cooling samples in the dark. Both observations showed that Si underwent a DX-like metastability in this material.

DX-Behavior of Si in AlN. R.Zeisel, M.W.Bayerl, S.T.B.Goennenwein, R.Dimitrov, O.Ambacher, M.S.Brandt, M.Stutzmann: Physical Review B, 2000, 61[24], R16283-6