Experimental flux-temperature phase diagrams were deduced for surface reconstruction transitions on 0.61nm compound semiconductors. The transitions occurred within, or near to, typical substrate temperature ranges for the growth of these materials by molecular beam epitaxy. The phase boundaries for (001) [c(4 x 4) → (1 x 3)] were presented (figure 1) as a function of substrate temperature and group-V limited growth-rate (proportional to the flux) for both cracked and uncracked group-V species.

Surface Reconstruction Phase Diagrams for InAs, AlSb and GaSb. A.S.Bracker, M.J.Yang, B.R.Bennett, J.C.Culbertson, W.J.Moore: Journal of Crystal Growth, 2000, 220[4], 384-92

Figure 1

Reconstruction Phase Diagram for AlSb