Quantum structures were systematically investigated by means of high-resolution X-ray diffraction. Samples were grown, using molecular-beam epitaxy, onto GaAs(001) substrates at various temperatures. A model was presented which permitted the simulation and quantitative analysis of X-ray diffraction profiles; as affected by stacking faults. This yielded a fast non-destructive method for the determination of stacking-fault densities, following calibration via transmission electron microscopy. A rapid increase in stacking fault density was found, above a critical thickness. The latter thickness decreased with increasing growth temperature.

Non-Destructive Detection of Stacking Faults for the Optimisation of CdSe/ZnSe Quantum-Dot Structures. T.Passow, H.Heinke, J.Falta, K.Leonardi, D.Hommel: Applied Physics Letters, 2000, 77[22], 3544-6