Samples of p-type material were implanted with 300eV H+ in order to minimize self-trapping at implantation defects. It was shown, by capacitance-voltage profiling, that H was mobile at 315 to 360K during implantation and that a complete passivation of acceptor concentrations of the order of 1016/cm3 could be achieved. Acceptors with a band-gap level of Ev+0.23eV, which were attributed to Cd vacancies were passivated; as were acceptors with levels at Ev+0.14eV (CuCd). No In-H pairs nor In-VCd-H complexes were detected by using perturbed angular correlation spectroscopy (111In probe atoms) after H implantation.

Passivation and Reactivation of Shallow Level Defects in p-CdTe after Low-Energy Hydrogen Implantation. U.Reislöhner, N.Achtziger, C.Hülsen, W.Witthuhn: Journal of Crystal Growth, 2000, 214-215, 979-82