Low-temperature photoluminescence techniques were used to profile the distribution of impurities and defects in a boule which had been grown at 700C by using a multi-tube vapour-growth technique. The dislocation density distribution was deduced from the Y luminescence band data. This revealed a clear improvement in crystal quality in the bulk of the material, as compared with the seed and interface regions.

Photoluminescence Study of a Bulk Vapour Grown CdTe Crystal. D.P.Halliday, M.D.G.Potter, J.T.Mullins, A.W.Brinkman: Journal of Crystal Growth, 2000, 220[1-2], 30-8