Single crystals were grown from excess-Te solution by using the Bridgman method, and a donor group-VII or group-III element was added in order to compensate Cd vacancies. Electrical conductivity and photoluminescence results suggested that the donor species were incorporated into the crystal in the order: I > Cl > F, In. Self-compensation occurred which was linked to the formation of a complex center such as a neutral complex center, (VCd2-•2DTe+)0, or an acceptor complex center, (VCd2-•DTe+)-. Shallow trapping levels and deep acceptor levels which were due to the complex centres were observed in In- and halogen-doped crystals, respectively.

Growth of CdTe from Te Excess Solution and Self-Compensation of Doped Donor. K.Mochizuki: Journal of Crystal Growth, 2000, 214-215, 9-13