The annealing behaviour of the electrical and optical properties of In-doped material was used to investigate self-compensation in high-resistivity samples. A characteristic luminescence line at 1.5842eV was found to be due to emissions from bound excitons that were trapped at compensating related defects, and was attributed to a Cd-vacancy/In complex. These defect complexes acted as acceptors, and were responsible for self-compensation via a balance between doped In donors and defect-complex acceptors. Magneto-optical measurements also supported this self-compensation mechanism.

Compensating Related Defects in In-Doped Bulk CdTe. S.Seto, K.Suzuki, V.N.Abastillas, K.Inabe: Journal of Crystal Growth, 2000, 214-215, 974-8