It was noted that, during the homo-epitaxial growth of CdTe, twin formation was affected by the orientation of the substrate and the supersaturation of the vaporized source materials. Increasing the step density and decreasing the supersaturation was assumed to promote the step-flow growth mode and to suppress spontaneous nucleation on step terraces. In order to investigate the step structure and identify characteristic planes on the growing surface layers, the surface of the grown layers was observed using atomic-force microscopy. Measurements were made of the tilt angle of characteristic planes for layers on (311)A,B and (211)A,B substrates. Characteristic facets, with particular tilt angles were found against the substrate surface in wide-stepped or rippled regions. In the case of low-supersaturation growth on the (211) substrate, the (100) facet was proved to be the singular plane. In the case of growth on (311) or (211) with a high supersaturation, the (111) facet was also singular; as well as the (100) plane. The measured widths of the zonal facets were several hundred times larger than the step terrace which was expected on the basis of the monolayer step model. It was close to the terrace width which had been estimated on the basis of twin-formation criteria.

Verification of Singular Plane Formation in CdTe Homoepitaxy. Y.Yoshioka, K.Shimizu, K.Takagaki, M.Kasuga: Journal of Crystal Growth, 2000, 217[1-2], 102-8