In order to improve the quality of composite substrates, the molecular beam epitaxial growth of CdTe(111) onto planar and vicinal As-passivated Si(111) surfaces was investigated. Rocking curves gave peaks which were narrower than 100arcsec, at a layer thickness of 1 to 2nm. Buffer layers of BeTe did not exhibit a dominant effect, while the twin content decreased markedly when misoriented substrates were used. Efficient twin suppression could be obtained by ensuring interface step alignment between the substrate and epitaxial CdTe film.

Heteroepitaxy of CdTe(111)B on Si(111):As. H.Schick, F.Bensing, U.Hilpert, U.Richter, L.Hansen, J.Wagner, V.Wagner, J.Geurts, A.Waag, G.Landwehr: Journal of Crystal Growth, 2000, 214-215, 1-4