The initial stages of the epitaxial growth of CdTe on ZnTe, and of ZnTe on CdTe, were monitored by using reflectance difference spectroscopy. The reflectance data revealed strong optical anisotropy responses at the critical points of the bulk dielectric function at various interband transitions. These indicated that anisotropic in-plane strain occurred during epitaxial growth. A model was used to determine the in-plane strain that was due to the imbalance of 60° dislocations along [1¯10] and [110]. Kinetic reflectance difference data, obtained at a suitable transition of the respective material, indicated (with an accuracy of one monolayer) the onset of misfit-dislocation formation.

In situ Observation of Stress Relaxation in CdTe/ZnTe Heterostructures by Reflectance-Difference Spectroscopy. R.E.Balderas-Navarro, K.Hingerl, A.Bonanni, H.Sitter, D.Stifter: Applied Physics Letters, 2001, 78[23], 3615-7