The effect of the presence of dislocations upon the electrical and opto-electronic properties of p-type Cd0.96Zn0.04Te, grown using the horizontal Bridgman method, was studied by performing I(V) and C(V) measurements before and after plastic deformation by Vickers microhardness indentation. It was found that dislocations which were introduced into the crystal led to the creation of acceptor centres that were attributed to Cd vacancies. A photoconductivity decrease after indentation was explained in terms of a decrease in the mobility of electrons due to their interaction with the dislocations which were created.

Study of the Effect of Polarity and of Dislocations on the Electrical and Opto-Electronic Properties of p-Type CdZnTe. K.Guergouri, E.Teyar, R.Triboulet: Journal of Crystal Growth, 2000, 216[1-4], 127-33