The experimental conditions for the growth of inclusion-free near-stoichiometric single crystals which contained a minimal concentration of native point defects were investigated. An inclusion-free single crystal was prepared under a Cd partial pressure of 1.2atm. Calculations which were based upon a model for 2 major defects, the Cd vacancy and the Cd interstitial, showed that a very small deviation of PCd from the stoichiometric line resulted in a marked generation of native defects. The reproducible production of high-resistivity material, by slow cooling along the stoichiometric line, was expected to be very difficult.

The Influence of Growth Conditions on the Quality of CdZnTe Single Crystals. J.Franc, R.Grill, P.Hlídek, E.Belas, L.Turjanska, P.Höschl, I.Turkevych, A.L.Toth, P.Moravec, H.Sitter: Semiconductor Science and Technology, 2001, 16[6], 514-20