Surface shapes, during the homo-epitaxial overgrowth of patterned GaAs substrates in the sector (001)-(111)A, were simulated. The model for shape evolution was based upon a diffusion equation in which the orientation-dependent parameters varied according to a simple model for the surface free energy of the zincblende crystal structure. Metastable pseudo-facets, as well as the initial shape of the step, were shown to play a major role in the evolution of the surface during overgrowth.

Diffusion and Incorporation: Shape Evolution During Overgrowth on Structured Substrates. W.Braun, V.M.Kaganer, A.Trampert, H.P.Schönherr, Q.Gong, R.Nötzel, L.Däweritz, K.H.Ploog: Journal of Crystal Growth, 2001, 227-228, 51-5