It was found that the deleterious effect of neutron irradiation upon the parameters of Schottky-gate field-effect transistors, based upon epitaxial GaAs heterostructures, could be markedly reduced by first implanting the heterostructures with Ar ions from the side of the substrate. The effect was explained in terms of the far-range gettering of impurities and defects from active transistor regions during neutron irradiation; which suppressed the formation of irradiation-induced deep energy levels.

Effect of Ion-Beam-Induced Getters on the Parameters of Neutron-Irradiated GaAs Heterostructures. S.V.Obolenskii, V.D.Skupov: Technical Physics Letters, 2000, 26[8], 645-6