It was pointed out that a reliable description of the as-implanted depth and vacancy profiles, and of the resultant damage, was required for technological development. Binary collision approximation methods were considered to be a time-economical tool for predicting such profiles. The binary collision approximation was here combined with a Ziegler-Biersack-Littmark interatomic potential and the Firsov model for electronic stopping. For each ion (He, Ne, Ar, Kr) which was investigated, the depth profile and vacancy distributions that were created by the bombardment were calculated for various energies. From these results, it was clear that the ion mass and energy strongly influenced the depth profile and vacancy distribution.

Depth Profiles Obtained from Simulation of GaAs Bombarded with Noble Gas Ions using MARLOWE. M.Swart, F.D.Auret, S.A.Goodman: Materials Science in Semiconductor Processing, 2000, 3[1-2], 97-101