A simple computer-controlled optical method for determining damage profiles in ion-implanted semiconductors was described. The damage profiles in Si-implanted samples, for various ion energies and ion doses, were measured by using this method. The resultant damage profiles were in good agreement with the total vacancy profiles which were generated by the transport of ions.

Measurement of the Damage Profile of Ion-Implanted GaAs using an Automated Optical Profiler. M.Gal, M.C.Wengler, S.Ilyas, I.Rofii, H.H.Tan, C.Jagadish: Nuclear Instruments & Methods in Physics Research B, 2001, 173[4], 528-32