The near-infrared optical properties, of samples which were As-implanted to various doses, were investigated by using Fourier-transform infra-red spectroscopy. The band-edge absorption coefficient and the band-gap energy of implanted material increased, and the red-shift decreased, as the dose was increased. The correlated defect concentration changed from less than 1017/cm3, to between 2 x 1019 and 5 x 1019/cm3, as the dose was increased from 1013 to 1016/cm2.

Optical Transmission Spectroscopy of Semi-Insulating GaAs Substrate Implanted with Arsenic Ions at Different Dosages. G.R.Lin, C.C.Hsu: Journal of Applied Physics, 2001, 89[11], 6536-8