The detection and analysis of H was carried out in undoped semi-insulating single crystals by using conventional elastic recoil detection analysis and a high-energy heavy-ion beam. The presence of H (some 3 x 1020/cm3) was observed in as-grown samples. High concentrations of atomic H (total concentration of 7 x 1020/cm3) were found at the surface, and decreased with depth after 100nm. Low-energy H and O ions were implanted separately at room temperature, and were also analysed by using the elastic recoil detection analysis technique. Low-temperature (4K) photoluminescence measurements of non-implanted and H+-implanted samples revealed passivation of the intrinsic deep level detect EL2 and shallow acceptor impurity C by the low-energy implanted H ions.

On the Analysis of Hydrogen in As-Grown and Ion-Implanted GaAs Single Crystals. M.Udhayasankar, J.Kumar, P.Ramasamy, D.K.Avasthi, D.Rabiraj: Crystal Research and Technology, 2000, 35[10], 1173-82