Cross-sectional high-resolution transmission electron microscopy was used to study 140keV Zn+-implanted samples at 110C. Gaussian-like depth-distributions of damage clusters were observed which retained some features of the original lattice. The distribution maximum was found to be located at between some 55 and 80nm below the implanted surface. Low-power pulsed-laser annealing of the samples led to the migration and clustering of radiation defects in a region which extended from the surface to a depth of 80nm. There was almost complete recrystallization of the material below this layer.

High-Resolution Transmission Electron Microscopy of Elevated Temperature Zn+-Implanted and Low-Power Pulsed Laser-Annealed GaAs. G.Zollo, C.Pizzuto, G.Vitali, M.Kalitzova, D.Manno: Journal of Applied Physics, 2000, 88[4], 1806-10