A detailed study was made of GaAs which had been grown directly onto off-cut (001) Ge substrates by using both solid-source and gas-source molecular beam epitaxy. It was found that control of the initial As2 exposure, and a clean Ge surface, were essential to achieving the antiphase domain-free growth of GaAs on Ge. Under optimum growth conditions, films were obtained in which significantly reduced interdiffusion across the GaAs/Ge interface occurred.

Growth of Device-Quality GaAs Layer Directly onto (001)Ge Substrates by Both Solid-Source and Gas-Source MBE. W.Li, S.Laaksonen, J.Haapamaa, M.Pessa: Journal of Crystal Growth, 2001, 227-228, 104-7