Synchrotron X-ray transmission topography was used to study various types of dislocation bundle in 5cm-diameter (001)-oriented GaAs substrates following the growth of hetero-epitaxial III-V compound semiconductor structures. Dislocation bundles of majority type started at the sample edges in regions which ranged up to about ±25° around the four (100) peripheral areas. They typically glided by up to about 1.5cm, into the wafer bulk, in ±[110] and ±[1¯10] line directions. Depending upon the dopant type, they formed pseudo-symmetrical 4-fold or 2-fold sets. Eradication of the bundles was possible by modifying the MBE sample holder.

Slip in GaAs Substrates during Molecular Beam Epitaxial Growth: an X-Ray Topographic Survey. P.Möck: Journal of Crystal Growth, 2001, 224[1-2], 11-20