A program was developed for simulating dislocation densities in bulk single crystals during Czochralski growth. The effects of anisotropy in elastic constants and slip direction were taken into account by averaging the Young’s modulus, the Poisson ratio and the resolved shear stress along the azimuthal direction. Axisymmetrical finite element analysis was applied to quantitative estimation of the dislocation density, during single crystal growth, by using the averaging techniques together with the Haasen-Alexander-Sumino model for creep in a single crystal at high temperatures. Dislocation density analyses were performed in the [001] and [111] growth directions of a bulk single crystal. It was noted that, although the [111] growth direction had the higher average Young’s modulus, it gave a lower dislocation density.

Dislocation Density Analyses of GaAs Bulk Single Crystal During Growth Process (Effects of Crystal Anisotropy). N.Miyazaki, Y.Kuroda, M.Sakaguchi: Journal of Crystal Growth, 2000, 218[2-4], 221-31