Various types of dislocation bundle were identified in the (001) substrates of III-V heterostructures. A comparison of scanning infra-red polariscopic images and X-ray transmission topograms revealed a one-to-one correlation between stripes of reduced residual shear strain, and dislocation bundles of majority type. On the other band, visible-light interferometry and Makyoh topography revealed a slip-line distribution that corresponded to the distribution of dislocation bundles of minority type. A new model was outlined, for the plastic deformation of circular GaAs wafers during thermal processing, which was in good agreement with the main experimental results.

Thermal Processing-Induced Plastic Deformation in GaAs Wafers. P.Mock, Z.J.Laczik, G.R.Booker: Materials Science and Engineering B, 2001, 80[1-3], 91-4