Two-dimensional maps of X-ray diffuse scattering in reciprocal space, for a real crystal which contained Coulomb deformation centres (clusters or dislocation loops), were calculated by using a new theory for crystalline media which contained homogeneously distributed defects. Maps were calculated for the fundamental, 400, and quasi-forbidden, 200, reflections of X-rays from GaAs crystals. They were also measured experimentally for GaAs films which were doped with Si to up to 1020/cm3. The procedure for fitting calculated values of differential diffuse scattering to experimental data permitted not only the integral characteristics of the structure’s perfection, but also the average radius and concentration of micro-defects, to be obtained.

Calculation of Two-Dimensional Maps of Diffuse Scattering by a Real Crystal with Microdefects and Comparison of Results Obtained from Three-Crystal Diffractometry. V.P.Kladko, L.I.Datsenko, J.Bak-Misiuk, S.I.Olikhovskii, V.F.Machulin, I.V.Prokopenko, V.B.Molodkin, Z.V.Maksimenko: Journal of Physics D, 2001, 34[SA], 87-92