The simultaneous determination of the type and charge state of dislocations, by means of cross-sectional scanning tunnelling microscopy, was considered. The method was explored for a dissociated perfect dislocation in highly Si-doped GaAs(110) surfaces. Scanning tunnelling microscopic images of dislocations which penetrated cleavage surfaces showed that the partial dislocation cores, and the stacking fault between them, were both negatively charged.

Direct Observation of Electrical Charges at Dislocations in GaAs by Cross-Sectional Scanning Tunnelling Microscopy. P.Ebert, C.Domke, K.Urban: Applied Physics Letters, 2001, 78[4], 480-2