The simultaneous analysis of strain modulation fringes in synchrotron Bragg-case patterns, and rocking curves recorded using a very narrow probe beam, was used for the determination of strain profiles in material which had been implanted with high doses of 1.5MeV Se ions. The existence of 2 strain components was revealed. The first was due to interstitial defects which were introduced into the matrix crystal, and the second was directly related to the introduced Se ions. The 2 components differed significantly with regard to their depth profiles and to their annealing behaviour.

Application of Bragg-Case Section Topography for Strain Profile Determination in AIIIBV Implanted Semiconductors. K.Wieteska, W.Wierzchowski, W.Graeff, A.Turos: Journal of Physics D, 2001, 34[10A], 122-7