The possible spatial orientation of a radiation-induced defect which was responsible for the 1eV infra-red absorption band was determined. The defect had a dipole moment which was oriented close to the <110> crystallographic axis, and possessed <111> symmetry. By taking account of these results, and assuming a divacancy nature for this defect, the latter could be attributed to a mixed divacancy structure for VGa+VAs type.

On the Possible Spatial Orientation of a Radiation-Induced Defect Responsible for the 1eV IR Absorption Band in Gallium Arsenide. Z.V.Pzhibuti, N.D.Dolidze: Technical Physics Letters, 2000, 26[9], 789-90