A study was made of low-temperature grown layers, as a function of the growth temperature and annealing treatment, by using X-ray diffraction, infra-red absorption, Hall effect, electron diffraction and Auger spectroscopic techniques. Correlations between the observations which were obtained by using these techniques permitted the correct measurement of excess As concentrations. It was shown that As antisite-related defects could account for all of the As in excess. The main defect consisted of an As antisite, combined with an As interstitial. When dissociation of the (AsGa,Asi) complex took place, the Asi were liberated and diffused to form precipitates. The dissociation had to occur via the formation of an intermediate so-called split configuration, via which two Asi were liberated.

Defects and Defect Behaviour in GaAs Grown at Low Temperature. M.Stellmacher, R.Bisaro, P.Galtier, J.Nagle, K.Khirouni, J.C.Bourgoin: Semiconductor Science and Technology, 2001, 16[6], 440-6