It was recalled that it had recently been shown that 4 electron traps: S1 (Ec-0.23eV), S2 (Ec-0.46eV), S3 (Ec-0.72eV) and S4 (Ec-0.74eV) were introduced into rapidly thermally annealed SiO2-capped n-type epitaxial layers. Deep-level transient spectroscopy was used here to investigate the electronic and annealing properties of these deep levels. The electron emission kinetics of S1 were enhanced by an electric field, and the activation energy of S1 decreased linearly from 0.233 to 0.199eV when the field was increased from 7.5 x 104 to 1.34 x 105V/cm. The intensities of S1, S2 and S4 exhibited Arrhenius-like dependences, upon the rapid thermal annealing temperature, which were related to the out-diffusion of Ga atoms into the SiO2 layer. The intensity of S2 (VGa-SiGa) also increased exponentially with the square of the annealing time, during rapid thermal annealing at 800C. Isochronal annealing experiments showed that S1 and S2 were thermally stable below 500 and 400C, respectively. Meanwhile S4, which was a member of the EL2 family, was stable up to 600C. Secondary defects were introduced during isochronal annealing at above 400C, and some of these defects were thermally stable at 600C.

Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-Capped n-Type GaAs Epitaxial Layers. P.N.K.Deenapanray, H.H.Tan, C.Jagadish, F.D.Auret: Journal of Applied Physics, 2000, 88[9], 5255-61