A model was proposed for making self-consistent calculations of the cathodoluminescence intensity which was used to study surface defects. Account was taken of the influence of surface defects upon electron beam parameters (energy, intensity) and depletion regions. The dependence of the cathodoluminescence intensity upon surface parameters (defect density, associated energy level) was calculated without introducing the concept of a so-called dead layer.

Study of Surface Defects in GaAs by Cathodoluminescence: Calculation and Experiment. A.Djemel, A.Nouiri, R.J.Tarento: Journal of Physics - Condensed Matter, 2000, 12[49], 10343-7