Atomic-resolution scanning tunnelling microscopy and low-energy electron diffraction were used to determine the surface structures of (¯1¯1¯3)B surfaces which were prepared by means of molecular beam epitaxy. An (8 x 1) reconstruction was found which formed by exchanging Ga and As atoms; as in the case of the proposed (113)A-(8 x 1) reconstruction. The characteristic components of the A and B (8 x 1) surface reconstructions were dimers which formed zig-zag chains along [¯3¯32] in 2 atomic levels. On the A-surface, the dimers were built up of As atoms while, on the B-surface, Ga atoms formed the dimers. The (¯1¯1¯3)B-(8 x 1) surface was rather smooth and did not exhibit the roughness which was typical of the (113)A-(8 x 1) surface.

Atomic Structure of the GaAs(¯1¯1¯3)B-(8x1) Surface Reconstruction. J.Márquez, L.Geelhaar, K.Jacobi: Physical Review B, 2000, 62[15], 9969-72