The properties of multiple quantum-wells which were grown at 300 to 400C were studied. Photoluminescence, absorption spectroscopy, optical transient current spectroscopy and pump-probe techniques were used to characterize samples which were grown onto GaAs(001) on-axis or mis-cut substrates. By using a laser as a pump source, the quenchable characteristics of EL2-like defects were observed in electro-absorption for the first time.

Properties of Deep Levels and Photorefractive Effect in GaAs/AlGaAs Multiple Quantum Wells Grown at Low Temperatures. Q.Huang, L.W.Guo, M.H.Zhang, Y.F.Zhang, Y.J.Han, J.M.Zhou: Journal of Crystal Growth, 2001, 227-228, 117-22