The effect of phosphidization upon dislocations, in GaAs which was grown onto Si substrates, was investigated. It was found that a high density of dislocations in such hetero-epitaxial layers greatly enhanced the diffusion of P during phosphine plasma exposure. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cells.

Passivation of Dislocations in GaAs Grown on Si Substrates by Phosphine Plasma Exposure. G.Wang, T.Ogawa, T.Soga, T.Jimbo, W.Umeno: Applied Physics Letters, 2001, 78[22], 3463-5