Growth of nitride-arsenides was carried out in an elemental solid-source molecular beam epitaxy system, using a plasma cell to supply reactive N. The growth was performed using plasma conditions which maximized the amount of atomic N, with respect to molecular N; as deduced from the emission spectrum of the plasma. The group-III growth rate controlled the N concentration in the film. The photoluminescence intensity of quantum wells increased markedly, and shifted to shorter wavelengths, during high-temperature annealing. The diffusion of N out of the quantum wells was responsible for the wavelength shift. A decrease in interstitial N was observed after annealing.

Nitrogen Incorporation into Group-III Nitride-Arsenide Materials Grown by Elemental Source Molecular Beam Epitaxy. S.G.Spruytte, M.C.Larson, W.Wampler, C.W.Coldren, H.E.Petersen, J.S.Harris: Journal of Crystal Growth, 2001, 227-228, 506-15