An investigation was made of the growth of GaAsN on GaAs using solid-source molecular beam epitaxy. It was found that GaAsN with a mirror-like surface could be grown by decreasing the As/Ga flux ratio, as compared with that used for the growth of GaAs. The N content of the GaAsN increased with decreasing substrate temperature and with increasing radio-frequency power. When the N composition was increased, misfit dislocations were observed at the GaAsN/GaAs hetero-interface. It was deduced that the propagation of dislocations in GaAsN was suppressed by adding N.

Control of Growth Process and Dislocation Generation of GaAsN Grown by All-Solid Source Molecular Beam Epitaxy. Y.Fujimoto, H.Yonezu, K.Momose, A.Utsumi, Y.Furukawa: Journal of Crystal Growth, 2001, 227-228, 491-5