The first experimentally determined signature of an intrinsic defect in this material was provided by an optically detected magnetic resonance study. The resolved central hyperfine structure identified the defect with a nuclear spin of I = 3/2, containing either an AsGa antisite or a Ga interstitial. The strength of the hyperfine interaction, and the growth conditions, suggested that a complex which involved the AsGa antisite was the more likely candidate.

Signature of an Intrinsic Point Defect in GaNxAs1-x. N.Q.Thinh, I.A.Buyanova, P.N.Hai, W.M.Chen, H.P.Xin, C.W.Tu: Physical Review B, 2001, 63[3], 033203 (4pp)