Strain relaxation in Ga0.75In0.25As and Ga0.6In0.4As, grown onto GaAs substrates at low temperatures, was studied before and after lateral oxidization of an underlying Al0.98Ga0.02As layer. Relaxation, as a function of layer thickness, was measured by using cross-sectional transmission electron microscopic and X-ray analysis techniques. It was found that oxidation of the Al0.98Ga0.02As layer improved relaxation of the strained GaInAs layers. Moreover, interfacial misfit dislocations were eliminated and the threading dislocation density was decreased by about an order of magnitude by oxidation.

Strain Relaxation and Defect Reduction in InGaAs/GaAs by Lateral Oxidation of an Underlying AlGaAs Layer. K.L.Chang, J.H.Epple, G.W.Pickrell, H.C.Lin, K.Y.Cheng, K.C.Hsieh: Journal of Applied Physics, 2000, 88[11], 6922-4