An attempt was made to improve the quality of Ga0.94In0.06As bridge layers, on GaAs (111)B trench substrates, by depositing SiNx onto the inner surfaces of the trenches. GaInAs layers which were grown in this way were found to exhibit a better quality, as indicated by microscopic photoluminescence data. Large-area trapezoidal SiNx films, when deposited over the inner surface of the trench, were found to be effective in reducing the dislocation content of the bridge layer.

Optimization of Circular Trench Geometry of GaAs(111)B Substrates for Growth of High-Quality InGaAs Bridge Layers. Y.Hayakawa, K.Balakrishnan, S.Iida, Y.Shibata, T.Koyama, M.Kumagawa: Journal of Crystal Growth, 2001, 229[1], 158-63