Strained graded-index separate confinement heterostructure single quantum-well laser diodes, grown via molecular beam epitaxy, were investigated. It was found that rapid thermal annealing could improve the 77K photoluminescence efficiency, and electron emission from the active layer, due to the removal of non-radiative centres from the interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing simultaneously increased the density of DX centres in the AlGaAs graded layer. Current stressing experiments on post-growth and annealed laser diodes indicated a corresponding increase in the concentration of DX centres; thus suggesting that DX centres might be responsible for the degradation of laser diode performance.

Effect of Rapid Thermal Annealing on Electron Emission and DX Centres in Strained InGaAs/GaAs Single Quantum Well Laser Diodes. L.Lu, Y.Zhang, Z.Xu, Z.Xu, Z.Wang, J.Wang, W.Ge: Journal of Crystal Growth, 2000, 218[1], 13-8