Quaternary epilayers were grown onto GaSb substrates, via metal-organic chemical vapour deposition, and the crystalline state and mismatch relaxation were studied by means of scanning transmission electron microscopy, bright-field imaging and convergent-beam electron diffraction. It was found that mismatch dislocations were generated from the interface, and that 90° Lomer dislocations produced surface ridges. Shifts of the Kikuchi lines could be used to determine the relaxation quantitatively.

Study of Quaternary GaInAsSb Alloy by Scanning Transmission Electron Microscopy. S.Li, K.Koike, F.Schulze-Kraasch, E.Kubalek: Journal of Crystal Growth, 2001, 223[4], 456-60