The effect of V-defects (hexagonal pits) which intentionally formed at threading dislocation sites was investigated in quantum wells which were grown onto GaN by means of metal-organic chemical vapour deposition. The relationship between the threading dislocation densities and the photoluminescence intensities of specimens was examined. It was demonstrated that the V-defects increased the luminescence intensity, and reduced the dependence of the photoluminescence intensity upon the threading dislocation density of the underlying GaN.

Effect of Intentionally Formed V-Defects on the Emission Efficiency of GaInN Single Quantum Wells. H.Takahashi, A.Ito, T.Tanaka, A.Watanabe, H.Ota, K.Chikuma: Japanese Journal of Applied Physics - 2, 2000, 39[6B], L569-71