The first observations of O-related deep-level defects in solid-source molecular beam epitaxially grown material were reported. The Si-doped samples were studied by using deep level transient spectroscopy, secondary-ion mass spectrometry, capacitance-voltage profiling and photoluminescence. Various amounts of O were introduced into epilayers by growing them under various P cracking temperatures. Four traps were resolved by means of deep level transient spectroscopy. Among these, 2 traps with thermal activation energies of 0.45 to 0.46 and 0.63 to 0.82eV were found to be O-related.

Oxygen-Related Deep Level Defects in Solid-Source MBE Grown GaInP. N.Xiang, A.Tukiainen, J.Dekker, J.Likonen, M.Pessa: Journal of Crystal Growth, 2001, 227-228, 244-8