Deep levels in Si-doped Ga0.51In0.49P, grown by means of compound-source molecular beam epitaxy, were investigated by using deep level transient spectroscopy. The samples were grown using V/III ratios of 4, 10 or 17. Depending upon the V/III ratio, 3 major deep levels having activation energies of 0.26, 0.36 and 0.82eV were observed. The deep levels exhibited P antisite behavior. Related complexes, unlike those found in solid-source molecular beam epitaxially grown samples, exhibited the behavior typical of P vacancies and related complexes. Layers of Si-doped material, which were grown using a V/III ratio of 4, exhibited trap concentrations and capture cross-sections which were as low as 1.38 x 1014/cm3 and 2.9 x 10-16cm2, respectively.

Characterization of Deep Levels in InGaP Grown by Compound-Source Molecular Beam Epitaxy. J.H.Kim, S.J.Jo, J.W.Kim, J.I.Song: Journal of Applied Physics, 2001, 89[8], 4407-9